Semiconductor devices and methods of manufacturing an operating same

ABSTRACT

A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

PRIORITY STATEMENT

This application is a continuation of U.S. application Ser. No.12/289,055 filed Oct. 20, 2008, which claims the benefit of KoreanPatent Application No. 10-2008-0097406, filed on Oct. 2, 2008, andKorean Patent Application No. 10-2007-0105102, filed on Oct. 18, 2007,in the Korean Intellectual Property Office, the entire contents of eachof which are herein incorporated by reference.

BACKGROUND

1. Field

One or more example embodiments relate to a semiconductor device andmethods of manufacturing and operating the semiconductor device.

2. Description of the Related Art

The degree of integration and the capacity of silicon (Si) basedsemiconductor devices may have been greatly improved. However, due tothe limited characteristics of Si materials and limitations inmanufacturing processes, it may be expected to be difficult to implementhigher integration and higher capacity Si based semiconductor devices inthe future.

Research into next generation devices that exceed the limit of currentSi based semiconductor devices may have been conducted. For example,attempts to manufacture micro-devices having outstanding performance mayhave been made by applying nanostructures, e.g., carbon nanotubes(CNTs). CNTs may have diameters of several to several tens of nanometers(nm), may be favorable to smaller-sized devices, and may haveoutstanding properties of high mobility, high electric-conductivity,high thermal conductivity, high mechanical intensity, and the like.Thus, CNTs may have been highlighted as materials exceeding the limit ofSi based semiconductor devices.

Nevertheless, it may be not easy to realize devices to which CNTs may beapplied due to some unsolved problems. In more detail, it may bedifficult to synthesize CNTs with reproducibility and handle thesynthesized CNTs. For example, it may be necessary to precisely arrangeCNTs on a desired area of a substrate for manufacturing a device toimplement devices by using CNTs. In addition, it may be not easy toapply CNTs and other nanostructures to a single device, limiting therealization of various high capacity devices.

SUMMARY

One or more example embodiments may include a semiconductor deviceincluding nanostructures.

One or more example embodiments may include a method of manufacturing asemiconductor device including nanostructures.

One or more example embodiments may include a method of operating asemiconductor device including nanostructures.

Additional aspects and/or advantages will be set forth in part in thedescription which follows and, in part, will be apparent from thedescription, or may be learned by practice of example embodiments.

To achieve the above and/or other aspects and advantages, one or moreexample embodiments may include a semiconductor device comprising: achannel layer including a plurality of first nanostructures; a sourceelectrode and a drain electrode contacting both ends of the channellayer; a first tunnel insulation layer formed on the channel layer; afirst charge trap layer formed on the first tunnel insulation layer andincluding a plurality of second nanostructures different from theplurality of first nanostructures; a first blocking insulation layerformed on the first charge trap layer; and a first control gate formedon the first blocking insulation layer.

The plurality of first nanostructures may be ambipolar.

The plurality of first nanostructures may be nanowires.

The plurality of second nanostructures may be nanoparticles.

The channel layer may be formed on a hydrophilic layer.

A hydrophobic layer may be formed on the hydrophilic layer around thechannel layer, and the source electrode and the drain electrode may beformed on the hydrophobic layer.

The first tunnel insulation layer may comprise sequentially stackedfirst and second insulation layers, and the second insulation layer maybe a hydrophilic molecular layer or a hydrophobic molecular layer.

The semiconductor device may further comprise: a second control gatespaced apart from the channel layer, wherein the channel layer may bedisposed between the first and second control gates.

The semiconductor device may further comprise: a second charge traplayer disposed between the channel layer and the second control gate; asecond tunnel insulation layer disposed between the channel layer andthe second charge trap layer; and a second blocking insulation layerdisposed between the second charge trap layer and the second controlgate.

The second charge trap layer may include nanoparticles.

The semiconductor device may be a transistor or a non-volatile memorydevice.

To achieve the above and/or other aspects and advantages, one or moreexample embodiments may include a method of manufacturing asemiconductor device, the method comprising: forming a channel layerincluding a plurality of first nanostructures on a substrate; forming asource electrode and a drain electrode contacting both ends of thechannel layer; forming a first tunnel insulation layer on the channellayer; forming a first charge trap layer including a plurality of secondnanostructures different from the plurality of first nanostructures onthe first tunnel insulation layer; forming a first blocking insulationlayer formed on the first charge trap layer; and forming a first controlgate formed on the first blocking insulation layer.

The plurality of first nanostructures may be ambipolar.

The forming of the channel layer may comprise: forming a non-hydrophobiclayer on the substrate; forming a hydrophobic layer having an openingused to expose a first area of the non-hydrophobic layer on thenon-hydrophobic layer; and absorbing the plurality of firstnanostructures in the first area exposed by the opening.

The plurality of first nanostructures may be nanowires.

The forming of the first tunnel insulation layer may comprise: formingan insulation layer that covers the channel layer, the source electrode,and the drain electrode; and forming an absorption layer that absorbsthe plurality of second nanostructures on the insulation layer above thechannel layer between the source electrode and the drain electrode.

The method may further comprise: forming an anti-absorption layer thatdoes not absorb the plurality of second nanostructures on the insulationlayer excluding the area on which the absorption layer may be to beformed after forming the insulation layer and before forming theabsorption layer.

The plurality of second nanostructures may be nanoparticles.

The method may further comprise: forming a second control gate spacedapart from the channel layer, wherein the channel layer may be disposedbetween the first and second control gates.

The method may further comprise: forming a second charge trap layerbetween the channel layer and the second control gate; forming a secondtunnel insulation layer between the channel layer and the second chargetrap layer; and forming a second blocking insulation layer disposedbetween the second charge trap layer and the second control gate.

To achieve the above and/or other aspects and advantages, one or moreexample embodiments may include a method of operating the semiconductordevice, the method comprising: trapping charges in the first charge taplayer.

The charges may be electrons or holes.

The semiconductor device may further comprise: a second charge traplayer and a second control gate, wherein the method further comprises:trapping electrons or holes in the second charge trap layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1-10 represent non-limiting, example embodiments asdescribed herein.

FIGS. 1 through 3 are cross-sectional views of a semiconductor deviceaccording to one or more example embodiments;

FIGS. 4A through 4I are perspective views for explaining a method ofmanufacturing a semiconductor device according to an example embodiment;

FIG. 5 is a graph illustrating characteristics of a gate voltage versusa drain current of the semiconductor device shown in FIG. 1 according toan example embodiment;

FIG. 6 is a graph illustrating a waveform of a gate voltage applied tothe semiconductor device shown in FIG. 1 and a variation of a draincurrent with respect to the gate voltage according to an exampleembodiment;

FIG. 7 is a graph illustrating waveforms of two gate voltages applied tothe semiconductor device shown in FIG. 2 and a variation of a draincurrent with respect to the two gate voltages according to an exampleembodiment;

FIGS. 8A and 8B are graphs illustrating characteristics of a gatevoltage versus a drain current of two semiconductor devices having thestructure shown in FIG. 3 and having a different manufacturing methodaccording to an example embodiment;

FIGS. 9A through 9D are cross-sectional views illustrating fourdifferent statuses of the semiconductor device shown in FIG. 3; and

FIG. 10 is a graph illustrating waveforms of two gate voltages appliedto the semiconductor device shown in FIG. 3 and a variation of a draincurrent with respect to the two gate voltages according to an exampleembodiment.

It should be noted that these Figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION OF THE EMBODIMENTS

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Like numbers indicate like elementsthroughout. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another element, component, region, layer or section. Thus,a first element, component, region, layer or section discussed belowcould be termed a second element, component, region, layer or sectionwithout departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of exampleembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, example embodiments should not be construed aslimited to the particular shapes of regions illustrated herein but areto include deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofexample embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined incommonly-used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

FIG. 1 is a cross-sectional view of a semiconductor device according toan example embodiment.

Referring to FIG. 1, a channel layer C1 may be formed on a substrateSUB1. The channel layer C1 may include a plurality of firstnanostructures n1. The first nanostructures n1 may be nanowires lying onthe substrate SUB1. The first nanostructrues n1 may be formed of anambipolar material with n-type semiconductor characteristics and p-typesemiconductor characteristics. The ambipolar material may be, forexample, a carbon nanotube (CNT). Therefore, the channel layer C1 mayinclude a plurality of nanowires formed of the CNT. A non-hydrophobiclayer L1 may be disposed between the channel layer C1 and the substrateSUB1. The non-hydrophobic layer L1 may be formed on the entire surfaceof the substrate SUB1. The channel layer C1 may be formed on apredetermined area of the non-hydrophobic layer L1. The non-hydrophobiclayer L1 may be a hydrophilic layer. For example, the non-hydrophobiclayer L1 may be an insulating material layer, e.g., a SiO₂ layer, glass,an Al₂O₃ layer, a ZrO₂ layer, or an HfO₂ layer. A hydrophobic layer L2may be formed on the non-hydrophobic layer L1 around the channel layerC1. The hydrophobic layer L2 may be a layer including hydrophobicmolecules, e.g., OTS (octadecyl-trichlorosilane), OTMS(octadecyl-trimethoxysilane), OTE (octadecyl-triethoxysilane), or thelike. Because the first nanostructures n1 may not be absorbed in thehydrophobic layer L2 but may be absorbed in the non-hydrophobic layer L1(for example, a hydrophilic layer), the channel layer C1 may beself-assembled on the non-hydrophobic layer L1 on which the hydrophobiclayer L2 may be not formed. A hydrophilic molecular layer (not shown)may be disposed between the non-hydrophobic layer L1 and the channellayer C1. In this case, the first nanostructures n1 may beself-assembled on the hydrophilic molecular layer (not shown). Thehydrophilic molecular layer (not shown) may include hydrophilicmolecules, e.g., APTES (aminopropyl-triexothysilane), MPTMS[(3-mercaptopropyl)trimethoxysilane], etc.

A source electrode S1 and a drain electrode D1 contact both ends of thechannel layer C1. The source electrode S1 and the drain electrode D1 mayextend onto the hydrophobic layer L2 from both ends of the channel layerC1. The source electrode S1 and the drain electrode D1 may be formed ofmetal, e.g., gold (Au) or palladium (Pd), a metal oxide, orsemiconductor that may be heavily doped with a conductive impurity.

A first charge trap layer CT1 may be formed above the channel layer C1.The first charge trap layer CT1 may be called a floating gate asoccasion demands. The first charge trap layer CT1 may include aplurality of second nanostructures n2. The second nanostructures n2 mayhave a structure different from that of the first nanostructure n1. Forexample, the second nanostructures n2 may be nanoparticles. Thenanoparticles may be formed of at least one of metal, metal oxide, andsemiconductor. For example, the second nanostructures n2 may benanoparticles formed of a metal, e.g., gold (Au).

A first tunnel insulation layer TL1 may be disposed between the channellayer C1 and the first charge trap layer CT1. The first tunnelinsulation layer TL1 may include a first layer L10 and a second layerL20 that may be sequentially formed on the channel layer C1. The firstlayer L10 may be formed on the source electrode S1 and the drainelectrode D1. The second layer L20 may be formed above the channel layerC1 between the source electrode S1 and the drain electrode D1. A thirdlayer L30 may be formed on the first layer L10 on which the second layerL20 may be not formed. The first layer L10 may be formed of SiO₂, Al₂O₃,ZrO₂, HfO₂ and another insulation material and may have a thickness lessthan 10 nm, for example, about 1 nm to about 5 nm. The second layer L20may be an absorption layer used to easily absorb the secondnanostructures n2, and may be a hydrophilic molecular layer or ahydrophobic molecular layer. The material of the second layer L20 may bedetermined according to the type of the second nanostructures n2. Thethird layer L30 may be an anti-absorption layer in which the secondnanostructures n2 may be not absorbed. The third layer L30 may havecharacteristics opposite to those of the second layer L20. In moredetail, if the second layer L20 may be the hydrophilic molecular layer,the third layer L30 may be the hydrophobic molecular layer.Alternatively, if the second layer L20 may be the hydrophobic molecularlayer, the third layer L30 may be the hydrophilic molecular layer.Because the second nanostructures n2 may not be absorbed in the thirdlayer L30 but may be absorbed in the second layer L20, the first chargetrap layer CT1 may be self-assembled on the second layer L20. If thesecond nanostructures n2 may be gold (Au) nanoparticles, the secondlayer L20 may be formed of hydrophilic molecules, e.g., APTES, and thethird layer L30 may be formed of hydrophobic molecules, e.g., OTS, OTMS,OTE, and the like. The second layer L20 may be unnecessary according tothe materials of the second nanoparticles n2 and the first layer L10.Alternatively, the third layer L30 may be unnecessary but the secondlayer L20 may be necessary. In another case, the first layer L10 may beformed on the channel layer C1 between the source electrode S1 and thedrain electrode D1 but the second layer L20 and the third layer L30 maybe unnecessary.

A first blocking insulation layer BL1 may be formed on the first chargetrap layer CT1 and the third layer L30. The first blocking insulationlayer BL1 may be formed of, for example, SiO₂, Al₂O₃, ZrO₂, HfO₂, andother insulation materials. The first blocking insulation layer BL1 maybe formed of a material that may be identical to or different from thatof the non-hydrophobic layer L1 and the first layer L10. The firstblocking insulation layer BL1 may be thicker than the first layer L10.For example, the thickness of the first blocking insulation layer BL1may be greater than several tens of nm.

A first control gate G1 may be formed on the first blocking insulationlayer BL1 above the first charge trap layer CT1. The first control gateG1 may be formed of metal, e.g., gold (Au) or palladium (Pd), a metaloxide, or semiconductor that may be heavily doped with a conductiveimpurity.

Although the semiconductor device having a single gate structure may bedescribed with reference to FIG. 1, a semiconductor device having adouble gate structure may be possible as shown in FIGS. 2 and 3.

FIG. 2 is a cross-sectional view of a semiconductor device according toan example embodiment.

Referring to FIG. 2, a second control gate G2 may be formed in an upperlayer portion of a substrate SUB1′. The substrate SUB1′ may be asemiconductor device. The second control gate G2 may be an area that maybe heavily doped with a conductive impurity. The second control gate G2may be formed under the channel layer C1, the source electrode S1, andthe drain electrode D1 or may be formed only under the channel layer C1.The non-hydrophobic layer L1 disposed between the second control gate G2and the channel layer C1 may be a gate insulation layer. Thenon-hydrophobic layer L2 and the upper structure thereof may be the sameas described with reference to FIG. 1.

Alternatively, a second charge trap layer C2 may be disposed between thesecond control gate G2 and the channel layer C1 as shown in FIG. 3.

Referring to FIG. 3, the second charge trap layer CT2 may be disposedbetween the second control gate G2 and the channel layer C1. Similarlyto the first charge trap layer CT1, the second charge trap layer CT2 maybe called a floating gate. The second charge trap layer CT2 may includenanostructures. For example, the second charge trap layer CT2 may besimilar to or the same as the first charge trap layer CT1. In moredetail, the second charge trap layer CT2 may include nanostructures n2′that may be similar to or the same as the second nanostructures n2.However, example embodiments are not limited thereto. The second chargetrap layer CT2 may have a different structure of the first charge traplayer CT1 or be formed of a different material from the first chargetrap layer CT1. Layers L10′, L20′, and L30′ may be disposed between thesecond charge trap layer CT2 and the second control gate G2. In moredetail, a fourth layer L10′ a may be formed on the second control gateG2, and a fifth layer L20′ may be disposed between the second chargetrap layer CT2 and the fourth layer L10′. The fifth layer L20′ may be anabsorption layer used to absorb the nanostructures n2′. A sixth layerL30′ may be formed on the fourth layer L10′ around the fifth layer L20′.The sixth layer L30′ may be an anti-absorption layer in which thenanostructures n2′ may be not absorbed. The fourth and fifth layers L10′and L20′ disposed between the second charge trap layer CT2 and thesecond control gate G2 may be a second blocking insulation layer. Thematerials of the fourth through sixth layers L10′, L20′, and L30′ maycorrespond to those of the first through third layers L10, L20, and L30,respectively. Therefore, the second charge trap layer CT2 may beself-assembled on the fifth layer L20′. The fifth and sixth layers L20′and L30′ may be optional in the same manner as the second and thirdlayers L20 and L30 may be optional. A non-hydrophobic layer L1′ thatcovers the second charge trap layer CT2 may be formed on the sixth layerL30′. The non-hydrophobic layer L1′ may correspond to thenon-hydrophobic layer L1. The non-hydrophobic layer L1′ disposed betweenthe second charge trap layer CT2 and the channel layer C1 may be asecond tunnel insulation layer. The structure formed on thenon-hydrophobic layer L1′ may be similar to that formed on thenon-hydrophobic layer L1 shown in FIG. 1.

Although the second control gate G2 may be in the upper layer portion ofthe substrate SUB1′ with reference to FIGS. 2 and 3, the second controlgate G2 may be formed as a layer (a metal layer or a doped semiconductorlayer) on the substrate SUB1′. Alternatively, the first charge traplayer CT1 and the first control gate G1 may be unnecessary withreference to FIG. 3. For example, a semiconductor device may have abottom single gate structure.

FIGS. 4A through 4I are perspective views for explaining a method ofmanufacturing a semiconductor device according to an example embodiment.

Referring to FIG. 4A, the non-hydrophobic layer L1 may be formed on thesubstrate SUB1. The non-hydrophobic layer L1 may be a hydrophilic layer.For example, the non-hydrophobic layer L1 may be an insulation materiallayer, e.g., a SiO₂ layer, glass, an Al₂O₃ layer, a ZrO₂ layer, and anHfO₂ layer. The hydrophobic layer L2 having an opening used to expose apart (hereinafter, referred to as a first area) of the non-hydrophobiclayer L1 may be formed on the non-hydrophobic layer L1. The hydrophobiclayer L2 may be a layer including hydrophobic molecules, e.g., OTS,OTMS, OTE, and the like. In more detail, the hydrophobic layer L2 may beformed by forming a resin layer (not shown) on the first area of thenon-hydrophobic layer L1, putting the substrate SUB1 into solution inwhich the hydrophobic molecules may be dissolved, and absorbing thehydrophobic molecules in the other part of the non-hydrophobic layer L1excluding the resin layer. The resin layer may be a sensitive layer andmay be formed by using, for example, a photolithography method. Also, asolvent of the solution in which the hydrophobic molecules may bedissolved may not dissolve the resin layer like hexane. After thehydrophobic layer L2 may be formed, the resin layer may be selectivelyremoved by using a solvent, e.g., acetone. A variety of methods may beused to form the hydrophobic layer L2. For example, a micro-contactprinting method or the photolithography method may be used to form thehydrophobic layer L2.

Although not shown, a hydrophilic molecular layer may be formed on anexposed area of the non-hydrophobic layer L1, e.g., the first area. Tothis end, the substrate SUB1 may be put into the solution in whichhydrophilic molecules may be dissolved. In this regard, the hydrophilicmolecules may not be absorbed in the hydrophobic layer L2 but may beabsorbed in the non-hydrophobic layer L1. The hydrophilic molecules maybe, for example, APTES and MPTMS, etc. A solvent of the solution inwhich the hydrophilic molecules may be dissolved may be ethanol, hexane,etc. Because the non-hydrophobic layer L1 may be hydrophilic, it may beoptional to form the hydrophilic molecular layer.

Referring to FIG. 4B, a solution (hereinafter, referred to as firstnanostructure solution) NS1 in which first nanostructures n1 may bedissolved may be prepared. The first nanostructures n1 may be nanowires,for example, CNTs. A solvent, e.g., dichlorobenzene, of the firstnanostructure solution NS1 may not affect the first nanostructures n1.The structure shown in FIG. 4A may be put into the first nanostructuresolution NS1. Because the first nanostructures n1 may not be absorbed inthe hydrophobic layer L2 but may be absorbed in the non-hydrophobiclayer L1 (for example, a hydrophilic layer), the first nanostructures n1may be self-assembled on the non-hydrophobic layer L1 on which thehydrophobic layer L2 may be not formed.

Referring to FIG. 4C, the plurality of first nanostructures n1 maycomprise the channel layer C1. The self-assembly makes it possible toeasily form the nanostructure channel layer C1 having a desired shape ata desired location of the substrate SUB1.

Referring to FIG. 4D, the source electrode S1 and the drain electrode D1that contact both ends of the channel layer C1 may be formed. The sourceelectrode S1 and the drain electrode D1 may extend onto the hydrophobiclayer L2 from both ends of the channel layer C1. The source electrode S1and the drain electrode D1 may be formed of metal, e.g., gold (Au) orpalladium (Pd), a metal oxide, or semiconductor that may be heavilydoped with a conductive impurity. In this regard, physical vapordeposition (PVD) or chemical vapor deposition (CVD), e.g., a sputteringmethod or a thermal evaporation method may be used to deposit a layer. Aphotolithography or E-beam method may be used to pattern the depositedlayer.

Referring to FIG. 4E, the first insulation layer L10 that covers thechannel layer C1, the source electrode S1, and the drain electrode D1may be formed on the hydrophobic layer L2. The first insulation layerL10 may be formed of SiO₂, Al₂O₃, ZrO₂, HfO₂ or another insulationmaterial, and may have a thickness less than about 10 nm, for example,about 1 nm to about 5 nm. The CVD, plasma enhanced (PE)-CVD, and atomiclayer deposition (ALD) may be used to form the first insulation layerL10. The process of forming the first insulation layer L10 may notaffect characteristics of the first nanostructrues n1.

Referring to FIG. 4F, the second insulation layer L20 may be formed onthe first insulation layer L10 above the channel layer C1 between thesource electrode S1 and the drain electrode D1. The third insulationlayer L30 may be formed on the first insulation layer L10 on which thesecond insulation layer L20 may be not formed. After the thirdinsulation layer L30 may be formed, the second insulation layer L20 maybe formed, and vice versa. The second insulation layer L20 may be anabsorption layer that absorbs the second nanostructures n2 (see FIG.4G). The third insulation layer L30 may be an anti-absorption layer thatdoes not absorb the second nanostructures n2. One of the second andthird insulation layers L20 and L30 may be hydrophilic and the other maybe hydrophobic. For example, the second insulation layer L20 may behydrophilic, and the third insulation layer L30 may be hydrophobic. Inthis case, similarly to the method of forming the hydrophobic layer L20shown in FIG. 4A, the third insulation layer L30 may be formed beforethe second insulation layer L20 may be formed. In this regard, thesubstrate SUB1 on which the third insulation layer L30 may be formed maybe put into a solution in which hydrophilic molecules may be dissolvedso as to form the second insulation layer L20. In this case, becausehydrophilic molecules may be not absorbed in the third insulation layerL30 but may be absorbed in the first insulation layer, the structureshown in FIG. 4F may be obtained. The hydrophilic molecules may be, forexample, APTES and MPTMS, etc. A solvent of the solution in which thehydrophilic molecules may be dissolved may be ethanol, hexane, etc.Alternatively, the third insulation layer L30 may not be formed but thesecond insulation layer L20 may be formed, or both the third insulationlayer L30 and the second insulation layer L20 may not be formed.

Referring to FIG. 4G, a solution (hereinafter, referred to as secondnanostructure solution) NS2 in which the second nanostructures n2 may bedissolved may be prepared. The second nanostructures n2 may be, forexample, nanoparticles. A solvent of the second nanostructure solutionNS2 may be deionized water. The structure shown in FIG. 4F may be putinto the second nanostructure solution NS2. Because the secondnanostructures n2 may not be absorbed in the second insulation layer L20but may be absorbed in the third insulation layer L30, the secondnanostructures n2 may be self-assembled on the second insulation layerL20 as shown in FIG. 4H.

Referring to FIG. 4H, the self-assembled plurality of secondnanostructures n2 may comprise the first charge trap layer CT1. Theself-assembly makes it possible to easily form the first charge traplayer CT1 having a desired shape at a desired location of the substrateSUB1.

Referring to FIG. 4I, the first blocking insulation layer BL1 thatcovers the first charge trap layer CT1 may be formed on the thirdinsulation layer L30. The first blocking insulation layer BL1 may beformed of, for example, SiO₂, Al₂O₃, ZrO₂, HfO₂, and other insulationmaterials. The first blocking insulation layer BL1 may be formed of amaterial that may be identical to or different from that of thenon-hydrophobic layer L1 and the first layer L10. The first blockinginsulation layer BL1 may be thicker than the first layer L10. Forexample, the thickness of the first blocking insulation layer BL1 may begreater than several tens of nm. The first blocking insulation layer BL1may be formed using CVD, PE-CVD, ALD, or the like, which may not changecharacteristics of the second nanostructures n2. The first control gateG1 may be formed on the first blocking insulation layer BL1. The firstcontrol gate G1 may include a first part P1 above the center of thechannel layer C1 and a second portion P2 extended from one end of thefirst part P1. The second part P2 may be perpendicular to the first partP1. The first control gate G1 may have a variety of shapes. The firstcontrol gate G1 may be formed of metal, e.g., gold (Au) or palladium(Pd), a metal oxide, or semiconductor that may be heavily doped with aconductive impurity. In this regard, PVD or CVD, e.g., a sputteringmethod or a thermal evaporation method may be used to deposit a layer. Aphotolithography or E-beam method may be used to pattern the depositedlayer. A cross-sectional view taken a line I-I′ of FIG. 4I maycorrespond to the structure shown in FIG. 1.

Although the method of manufacturing the semiconductor device having thesingle gate structure shown in FIG. 1 may be described with reference toFIGS. 4A through 4I, the semiconductor device having the double gatestructure shown in FIGS. 2 and 3 may also be manufactured.

For example, before or after the non-hydrophobic layer L1 may be formedwith reference to FIG. 4A, if the upper layer portion of the substrateSUB1 may be heavily doped with a conductive impurity, the second controlgate G2 may be formed as shown in FIG. 2. Instead of doping the upperlayer portion of the substrate SUB1 and forming the second control gateG2, the second control gate G2 may be formed on the substrate SUB1 as anadditional layer. Also, similarly to the method of forming the firstcharge trap layer CT1, the second charge trap layer CT2 may be disposedbetween the second control gate G2 and the channel layer C1.

In the present embodiment, it may be easy to arrange predeterminednanostructures, for example, nanowires (CNTs) or nanoparticles on adesired area of a substrate. Also, at least two different nanostructuresmay be applied to a single device. Therefore, various high densitydevices may be easily manufactured by applying one or morenanostructures.

Hereinafter, a method of operating a semiconductor device,characteristics of the semiconductor device, and an applicable fieldthereof according to one or more example embodiments will now bedescribed.

The semiconductor device shown in FIG. 1 may be operated by trappingelectrons or holes in the first charge trap layer CT1 and applying anormal operation voltage to the source electrode S1, the drain electrodeD1, and the first control gate G1. The type of charges trapped in thefirst charge trap layer CT1 may be changed while the semiconductordevice may be used. A positive high voltage, for example, +10V, may beapplied to the first control gate G1 so as to trap charges in the firstcharge trap layer CT1. In this regard, electrons travel from the channellayer C1 to the first charge trap layer CT1 and may be trapped accordingto the positive high voltage. A negative high voltage, for example,−10V, may be applied to the first control gate G1 so as to trap holes inthe first charge trap layer CT1. In this regard, holes travel from thechannel layer C1 to the first charge trap layer CT1 and may be trappedaccording to the negative high voltage. Characteristics of thesemiconductor device may vary according to which charges (electrons orholes) may be trapped in the first charge trap layer CT1 by applying thepositive or negative high voltage to the first control gate G1. Forexample, when holes may be trapped in the first charge trap layer CT1 byapplying the negative high voltage to the first control gate G1, thesemiconductor device may have the characteristics of an n-type channeltransistor (hereinafter, referred to as an n-type transistor) within thenormal operation voltage range. When electrons may be trapped in thefirst charge trap layer CT1 by applying the positive high voltage to thefirst control gate G1, the semiconductor device may have thecharacteristics of a p-type channel transistor (hereinafter, referred toas a p-type transistor) within the normal operation voltage range. Thiswill be described in more detailed with reference to FIG. 5.

FIG. 5 is a graph illustrating characteristics of a gate voltage Vgversus a drain current Id of the semiconductor device shown in FIG. 1according to an example embodiment. The gate voltage Vg may be appliedto the first control gate G1, and the drain current Id flows between thesource electrode S1 and the drain electrode D1. The drain current Id maybe measured by varying the gate voltage Vg. A drain voltage of 1V may beapplied between the source electrode S1 and the drain electrode D1.

Referring to FIG. 5, a graph (hereinafter, referred to as a first graph)showing that the gate voltage Vg may be increased from −10V to +10V anda graph (hereinafter, referred to as a second graph) G2 showing that thegate voltage Vg may be reduced from +10V to −10V may be entirelydifferent from each other. For example, an electric hysteresis betweenthe first and second graphs G1 and G2 may be different. In more detail,when the gate voltage Vg may be applied at −10V, the semiconductordevice may have the characteristics of the first graph G1 until the gatevoltage Vg may be applied at +10V. When the gate voltage Vg may beapplied at −10V, holes may be trapped in the first charge trap layer CT1so that an electric field applied to the channel layer C1 increases in apositive direction. Therefore, the first graph G1 may be in a negativedirection as a whole. If holes may be trapped in the first charge traplayer CT1, charges trapped in the first charge trap layer CT1 remainholes at the positive voltage below a threshold voltage. When thepositive high voltage exceeding the threshold voltage may be applied,charges trapped in the first charge trap layer CT1 may be changed toelectrons. If the gate voltage Vg may be reduced from +10V correspondingto the positive high voltage exceeding the threshold voltage, thesemiconductor device may have the characteristics of the second graph G2until the gate voltage Vg may be applied at −10V. If the gate voltage Vgof +10V may be applied, the electrons may be trapped in the first chargetrap layer CT1 so that an electric field applied to the channel layer C1may be reduced in the negative direction. Therefore, the second graph G2may be in the positive direction as a whole.

The characteristics of the gate voltage Vg and the drain current Id maydramatically vary according to charges trapped in the first charge traplayer CT1. The first graph G1 and the second graph G2 may have oppositecharacteristics within a predetermined voltage range. For example, whenthe gate voltage Vg increases within the gate voltage Vg range(hereinafter, referred to as a first range) R1 from about −4V to about+5V, the first graph G1 increases, whereas the second graph G2decreases. The characteristics of the n-type transistor may be that thedrain current Id increases according to the increase of the gate voltageVg. The characteristics of the p-type transistor may be that the draincurrent Id decreases according to the increase of the gate voltage Vg.The normal operation voltage may be within the first range R1.Therefore, the semiconductor device may have the characteristics of then-type transistor or the characteristics of the p-type semiconductortransistor according to the type of charges trapped in the first chargetrap layer CT1. This means that the semiconductor device may be used asthe n-type transistor so as to attain a predetermined first goal, andused as the p-type transistor by switching the type of the semiconductordevice so as to attain a predetermined second goal. The semiconductordevice of the present embodiment may be a reversible type-switchingdevice (transistor or memory device) and thus it may have variousadvantages. For example, a reconfigurable circuit may be manufactured.

FIG. 6 is a graph illustrating a waveform of the gate voltage Vg appliedto the semiconductor device shown in FIG. 1 and a variation of the draincurrent Id with respect to the gate voltage Vg according to an exampleembodiment.

Referring to FIG. 6, when a positive high voltage and a first voltage V1with a small intensity may be sequentially applied to the first controlgate G1, the waveform of the first voltage V1 may be contrary to that ofthe drain current Id generated by the waveform of the first voltage V1.If the positive high voltage may be applied to the first control gateG1, the semiconductor device may have the characteristics of the p-typetransistor. When a negative high voltage and a second voltage V2 with asmall intensity may be sequentially applied to the first control gateG1, the waveform of the second voltage V2 may be similar to that of thedrain current Id generated by the waveform of the second voltage V2. Ifthe negative high voltage may be applied to the first control gate G1,the semiconductor device may have the characteristics of the n-typetransistor.

If the semiconductor device may be used as a memory device, the amountof the drain current Id may vary according to charges (electrons orholes) trapped in the first charge trap layer CT1 or whether charges maybe trapped or not. Thus, it may be possible to realize a non-volatilememory device that uses the first charge trap layer CT1 as a memorylayer.

FIG. 7 is a graph illustrating waveforms of two gate voltages(hereinafter, referred to as first and second gate voltages) Vg1 and Vg2applied to the semiconductor device, e.g. a double gate device, shown inFIG. 2 and a variation of the drain current Id with respect to the firstand second gate voltages Vg1 and Vg2 according to an example embodiment.The first and second gate voltages Vg1 and Vg2 may be applied to thefirst and second control gates G1 and G2, respectively, shown in FIG. 2.

Referring to FIG. 7, when a first voltage V1′ of a normal operationvoltage may be applied to the second control gate G2 after the firstgate voltage Vg1 of +10V may be applied, the waveform of the draincurrent Id generated by the waveform of the first voltage V1′ may becontrary to that of the first voltage V1′. Because of the application ofthe first gate voltage Vg1 of +10V, the semiconductor device may havethe characteristics of the p-type transistor. Also, the semiconductordevice may be normally operated by using the second control gate G2after electrons may be trapped in the first charge trap layer CT1 by thefirst control gate G1. When a second voltage V2′ of the normal operationvoltage may be applied to the second control gate G2 after the firstgate voltage Vg1 of −10V may be applied, the waveform of the draincurrent Id generated by the waveform of the second voltage V2′ may besimilar to that of the second voltage V2′. Because of the application ofthe first gate voltage Vg1 of −10V, the semiconductor device may havethe characteristics of the n-type transistor. Also, the semiconductordevice may be normally operated by using the second control gate G2after holes may be trapped in the first charge trap layer CT1 by thefirst control gate G1. In more detail, after electrons or holes may betrapped in the first charge trap layer CT1, the normal operation voltagemay be applied to the source electrode S1, the drain electrode D1, andthe first control gate G1, or the normal operation voltage may beapplied to the source electrode S1, the drain electrode D1, and thesecond control gate G2. The semiconductor device shown in FIG. 2 may beused as a transistor or a memory device.

FIGS. 8A and 8B are graphs illustrating characteristics of the gatevoltage Vs versus the drain current Id of two semiconductor deviceshaving the structure shown in FIG. 3 and having a differentmanufacturing method according to an example embodiment. The gatevoltage Vg may be applied to the first control gate G1. The draincurrent Id flows between the source electrode S1 and the drain electrodeD1. The drain current Id may be measured by varying the gate voltage Vg.A drain voltage of 1V may be applied between the source electrode S1 andthe drain electrode D1.

Referring to FIG. 8A, similarly to the graph shown in FIG. 5, when thegate voltage Vg increases from about −4V to about +5V, a first graph G1′may have the characteristics of an n-type transistor and a second graphG2′ may have the characteristics of a p-type transistor.

Referring to FIG. 8B, when a positive high voltage may be applied, thedrain current Id may be about 0.2 μA, which may be reduced from thedrain current Id of about 0.4 μA shown in FIG. 8A. Also, when the gatevoltage Vg increases from about −10V to about 0V, a first graph G1″ anda second graph G2″ may have the characteristics of the p-typetransistor.

In more detail, the semiconductor device in FIG. 8A may have both thecharacteristics of the n-type transistor and of the p-type transistor,whereas the semiconductor device may have just the characteristics ofthe p-type transistor and not the characteristics of the n-typetransistor. Such a difference shows that the semiconductor devices thatmay be similar in terms of the structure may be different from eachother in terms of hysteresis, e.g. the characteristics of the gatevoltage Vg versus the drain current Id according to the method ofmanufacturing the semiconductor devices. This may be applied to thesemiconductor devices shown in FIGS. 1 and 2 in the same manner.

To operate the semiconductor device shown in FIG. 3, electrons or holesmay be trapped in the first charge trap layer CT1, electrons or holesmay be trapped in the second charge trap layer CT2, and a normaloperation voltage may be applied to the source electrode S1, the drainelectrode D1, and the first control gate G1, or the normal operationvoltage may be applied to the source electrode S1, the drain electrodeD1, and the second control gate G2. The semiconductor device shown inFIG. 3 may be used as a transistor or a memory device like thesemiconductor devices shown in FIGS. 1 and 2. Because the semiconductordevice shown in FIG. 3 may have the two charge trap layers CT1 and CT2,the semiconductor device shown in FIG. 3 may have more statuses thanthose of the semiconductor devices shown in FIGS. 1 and 2. When thesemiconductor device shown in FIG. 3 may be used as the memory device,the semiconductor device shown in FIG. 3 may have statuses correspondingto four different statuses, e.g., (0,0), (1,0), (0,1), and (1,1),according to the types of charges trapped in the first charge trap layerCT1 and the second charge trap layer CT2. The four statuses maycorrespond to those shown in FIGS. 9A through 9D.

Referring to FIG. 9A, electrons may be trapped in both the first chargetrap layer CT1 and the second charge trap layer CT2. To this end, apositive high voltage may be applied to the first control gate G1 andthe second control gate G2.

Referring to FIG. 9B, holes may be trapped in the first charge traplayer CT1, and electrons may be trapped in the second charge trap layerCT2. To this end, a negative high voltage may be applied to the firstcontrol gate G1, and a positive high voltage may be applied to thesecond control gate G2.

Referring to FIG. 9C, electrons may be trapped in the first charge traplayer CT1, and holes may be trapped in the second charge trap layer CT2.To this end, a positive high voltage applied to the first control gateG1, and a negative high voltage may be applied to the second controlgate G2. The status shown in FIG. 9C may be regarded as being similar tothat shown in FIG. 9B in view of the fact that holes may be trapped in aside of the channel layer C1 and electrons may be trapped in anotherside thereof. However, if the upper structure of the channel layer C1may be not perfectly symmetrical with the lower structure thereof, thestatuses shown in FIGS. 9B and 9C may have different resistances. Inmore detail, the statuses shown in FIGS. 9B and 9C may have differentresistances when the first tunnel insulation layer TL1 and the secondtunnel insulation layer L10′+L20′ may be different from each other interms of the thickness and the materials, and the first and secondcharge trap layers CT1 and CT2 may be different from each other in termsof the materials and size.

Referring to FIG. 9D, holes may be trapped in both the first charge traplayer CT1 and the second charge trap layer CT2. To this end, a negativehigh voltage may be applied to the first control gate G1 and the secondcontrol gate G2.

Therefore, in the present embodiment, a multi-bit memory device in whicha unit memory cell may have four different resistance statuses may berealized.

FIG. 10 is a graph illustrating waveforms of two gate voltages(hereinafter, referred to as first and second gate voltages) Vg1 and Vg2applied to the first and second control gates G1 and G2 of thesemiconductor device shown in FIG. 3, and a variation of the draincurrent Id with respect to the first and second gate voltages Vg1 andVg2 according to an example embodiment. The graph relates to thesemiconductor device having the structure shown in FIG. 3 and thecharacteristics shown in FIG. 8A. In this regard, a voltage between thesource electrode S1 and the drain electrode D1 may be about 1V.

Referring to FIG. 10, the application of +10V to the first and secondcontrol gates G1 and G2 results in a status of (0, 0). The applicationof −10V to the first control gate G1 and the application of +10V to thesecond control gate G2 results in a status of (1, 0). The application of+10V to the first control gate G1, and the application of −10V to thesecond control gate G2 results in a status of (0, 1). The application of−10V to the fist and second control gates G1 and G2 results in a statusof (1, 1). The drain current Id differs in the statuses (0, 0), (1, 0),(0, 1), and (1, 1).

While aspects of example embodiments may have been particularly shownand described with reference to differing embodiments thereof, it shouldbe understood that these exemplary embodiments should be considered in adescriptive sense only and not for purposes of limitation. Descriptionsof features or aspects within each embodiment should typically beconsidered as available for other similar features or aspects in theremaining embodiments. It would be appreciated by those of ordinaryskill in the art that changes may be made in the structures shown inFIGS. 1 through 3 and the manufacturing methods shown in FIGS. 4Athrough 4I. For example, the channel layer C1 may be formed of anambipolar material other than CNTs, e.g., grapheme.

Thus, although a few embodiments may have been shown and described, itwould be appreciated by those of ordinary skill in the art that changesmay be made in these embodiments without departing from the principlesand spirit of example embodiments, the scope of which may be defined inthe claims and their equivalents.

1. A semiconductor device comprising: a non-hydrophobic layer; a channellayer formed on the non-hydrophobic layer, the channel layer including aplurality of first nanostructures; a hydrophobic layer formed on thenon-hydrophobic layer around the channel layer; a source electrode and adrain electrode formed on the hydrophobic layer and contacting both endsof the channel layer, respectively; a first tunnel insulation layerformed on the channel layer; a first charge trap layer formed on thefirst tunnel insulation layer, the first charge trap layer including aplurality of second nanostructures different from the plurality of firstnanostructures; a first blocking insulation layer formed on the firstcharge trap layer; and a first control gate formed on the first blockinginsulation layer.
 2. The semiconductor device of claim 1, wherein theplurality of first nanostructures are ambipolar.
 3. The semiconductordevice of claim 1, wherein the plurality of first nanostructures arenanowires.
 4. The semiconductor device of claim 1, wherein the pluralityof second nanostructures are nanoparticles.
 5. The semiconductor deviceof claim 1, wherein the non-hydrophobic layer is a hydrophilic layer. 6.The semiconductor device of claim 1, wherein the first tunnel insulationlayer comprises sequentially stacked first and second insulation layers,and the second insulation layer is a hydrophilic molecular layer or ahydrophobic molecular layer.
 7. The semiconductor device of claim 1,further comprising: a second control gate spaced apart from the channellayer, wherein the channel layer is disposed between the first andsecond control gates.
 8. The semiconductor device of claim 7, furthercomprising: a second charge trap layer disposed between the channellayer and the second control gate; a second tunnel insulation layerdisposed between the channel layer and the second charge trap layer; anda second blocking insulation layer disposed between the second chargetrap layer and the second control gate.
 9. The semiconductor device ofclaim 8, wherein the second charge trap layer includes nanoparticles.10. The semiconductor device of claim 1, wherein the semiconductordevice is a transistor or a non-volatile memory device.
 11. A method ofmanufacturing a semiconductor device, the method comprising: providing anon-hydrophobic layer; forming a hydrophobic layer on thenon-hydrophobic layer, the hydrophobic layer having an opening thatexposes a first area of the non-hydrophobic layer; forming a channellayer on the first area exposed by the opening, the channel layerincluding a plurality of first nanostructures; forming a sourceelectrode and a drain electrode contacting both ends of the channellayer; forming a first tunnel insulation layer on the channel layer;forming a first charge trap layer on the first tunnel insulation layer,the first charge trap layer including a plurality of secondnanostructures different from the plurality of first nanostructures;forming a first blocking insulation layer on the first charge traplayer; and forming a first control gate on the first blocking insulationlayer.
 12. The method of claim 11, wherein the plurality of firstnanostructures are ambipolar.
 13. The method of claim 11, wherein theforming the channel layer comprises: absorbing the plurality of firstnanostructures in the first area exposed by the opening.
 14. The methodof claim 11, wherein the plurality of first nanostructures arenanowires.
 15. The method of claim 11, wherein the forming the firsttunnel insulation layer comprises: forming an insulation layer thatcovers the channel layer, the source electrode, and the drain electrode;and forming an absorption layer that absorbs the plurality of secondnanostructures on the insulation layer above the channel layer betweenthe source electrode and the drain electrode.
 16. The method of claim15, after the forming the insulation layer and prior to the forming theabsorption layer, further comprising: forming an anti-absorption layeron the insulation layer, wherein the anti-absorption layer does notabsorb the plurality of second nanostructures on the insulation layerexcluding the area on which the absorption layer is to be formed. 17.The method of claim 11, wherein the plurality of second nanostructuresare nanoparticles.
 18. The method of claim 11, further comprising:forming a second control gate spaced apart from the channel layer,wherein the channel layer is disposed between the first and secondcontrol gates.
 19. The method of claim 18, further comprising: forming asecond charge trap layer between the channel layer and the secondcontrol gate; forming a second tunnel insulation layer between thechannel layer and the second charge trap layer; and forming a secondblocking insulation layer between the second charge trap layer and thesecond control gate.